E6A01:

In what application is gallium arsenide used as a semiconductor material?

1. In high-current rectifier circuits
2. In high-power audio circuits
3. In microwave circuits
4. In very low-frequency RF circuits

E6A02:

Which of the following semiconductor materials contains excess free electrons?

1. N-type
2. P-type
3. Bipolar
4. Insulated gate

E6A03:

Why does a PN-junction diode not conduct current when reverse biased?

1. Only P-type semiconductor material can conduct current
2. Only N-type semiconductor material can conduct current
3. Holes in P-type material and electrons in the N-type material are separated by the applied voltage, widening the depletion region
4. Excess holes in P-type material combine with the electrons in N-type material, converting the entire diode into an insulator

E6A04:

What is the name given to an impurity atom that adds holes to a semiconductor crystal structure?

1. Insulator impurity
2. N-type impurity
3. Acceptor impurity
4. Donor impurity

E6A05:

How does DC input impedance at the gate of a field-effect transistor compare with the DC input impedance of a bipolar transistor?

1. They are both low impedance
2. An FET has lower input impedance
3. An FET has higher input impedance
4. They are both high impedance

E6A06:

What is the beta of a bipolar junction transistor?

1. The frequency at which the current gain is reduced to 0.707
2. The change in collector current with respect to base current
3. The breakdown voltage of the base to collector junction
4. The switching speed

E6A07:

Which of the following indicates that a silicon NPN junction transistor is biased on?

1. Base-to-emitter resistance of approximately 6 to 7 ohms
2. Base-to-emitter resistance of approximately 0.6 to 0.7 ohms
3. Base-to-emitter voltage of approximately 6 to 7 volts
4. Base-to-emitter voltage of approximately 0.6 to 0.7 volts

E6A08:

What term indicates the frequency at which the grounded-base current gain of a transistor has decreased to 0.7 of the gain obtainable at 1 kHz?

1. Corner frequency
2. Alpha rejection frequency
3. Beta cutoff frequency
4. Alpha cutoff frequency

E6A09:

What is a depletion-mode FET?

1. An FET that exhibits a current flow between source and drain when no gate voltage is applied
2. An FET that has no current flow between source and drain when no gate voltage is applied
3. Any FET without a channel
4. Any FET for which holes are the majority carriers

E6A10:

In Figure E6-1, what is the schematic symbol for an N-channel dual-gate MOSFET?

1. 2
2. 4
3. 5
4. 6

E6A11:

In Figure E6-1, what is the schematic symbol for a P-channel junction FET?

1. 1
2. 2
3. 3
4. 6

E6A12:

Why do many MOSFET devices have internally connected Zener diodes on the gates?

1. To provide a voltage reference for the correct amount of reverse-bias gate voltage
2. To protect the substrate from excessive voltages
3. To keep the gate voltage within specifications and prevent the device from overheating
4. To reduce the chance of static damage to the gate